Conveyor-mode electron shuttling through a T-junction in Si/SiGe

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Conveyor-mode shuttling in gated Si/SiGe devices moves single electrons, electron patterns and spin qubits across several micrometres with a scalable number of signal lines. This work introduces a T-junction linking two independently driven shuttle lanes, controlling the filling of 54 quantum dots with simple pulses, swapping electron patterns and laying the groundwork for native spin-qubit SWAP gates — a building block for two-dimensional architectures with flexible qubit routing for quantum error correction.

Inter-lane charge transfer fidelity of 100.0000000 % (−9×10⁻⁷) at 270 mm s⁻¹